PART |
Description |
Maker |
IS42VM16800G IS42SM16800G-6BLI IS42VM16800G-6BLI I |
Auto refresh and self refresh 2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
HM5164165F HM5165165F HM5165165FJ-5 HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
|
HITACHI[Hitachi Semiconductor]
|
HM5165805F HM5165805FJ HM5165805FJ-5 HM5165805FJ-6 |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
Hitachi Semiconductor
|
HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
HM5112805FTD-5 HM5113805FTD-5 |
128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh 128M EDO DRAM (16-Mword 隆驴 8-bit) 8k refresh/4k refresh
|
Elpida Memory
|
HM51W18165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh 1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic Samsung semiconductor
|
HYB5116165BSJ-50- HYB5116165BJ-70 HYB5116165BJ-60 |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
|
http:// SIEMENS AG
|
M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYB5118160BSJ-60 HYB5118160BSJ-50 HYB3118160 HYB31 |
1M x 16 Bit 5 V 60 ns FPM DRAM 1M x 16 Bit 5 V 50 ns FPM DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode) 1M*16-Bit Dynamic RAM
1k Refresh
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|